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DMP2305U价格

参考价格:¥0.2699

型号:DMP2305U-7 品牌:Diodes 备注:这里有DMP2305U多少钱,2026年最近7天走势,今日出价,今日竞价,DMP2305U批发/采购报价,DMP2305U行情走势销售排行榜,DMP2305U报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMP2305U

P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance ◾ 60mΩ @ VGS = -4.5V ◾ 90mΩ @ VGS = -2.5V ◾ 113mΩ @ VGS = -1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not

DIODES

美台半导体

DMP2305U

P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not

ZPSEMIZP Semiconductor

至尚臻品

DMP2305U

P-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not

ZPSEMIZP Semiconductor

至尚臻品

P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance ◾ 60mΩ @ VGS = -4.5V ◾ 90mΩ @ VGS = -2.5V ◾ 113mΩ @ VGS = -1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • 60mΩ @ VGS = -4.5V • 90mΩ @ VGS = -2.5V • 113mΩ @ VGS = -1.8V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Not

ZPSEMIZP Semiconductor

至尚臻品

P-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate\nresistance (RDS(on)) and yet maintain superior switching\nperformance, making it ideal for high efficiency power management\napplications.

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Input Capacitance • Low On-Resistance • Fast Switching Spee

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Input Capacitance • Low On-Resistance • Fast Switching Spee

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low Input Capacitance • Low On-Resistance • Fast Switching Spee

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

文件:205.99 Kbytes Page:8 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

文件:205.99 Kbytes Page:8 Pages

DIODES

美台半导体

20V P-CHANNEL ENHANCEMENT MODE MOSFET

文件:205.99 Kbytes Page:8 Pages

DIODES

美台半导体

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

NTE

丝印代码:A5***;P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated

VISHAYVishay Siliconix

威世威世科技公司

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

PLLatinumTM 550 MHz Frequency Synthesizer for RF Personal Communications

文件:228.09 Kbytes Page:14 Pages

NSC

国半

DMP2305U产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    P

  • ESD Diodes:

    No

  • VDS:

    20 V

  • VGS:

    8 ±V

  • IDS @ TA = +25°C:

    4.2 A

  • PD @ TA = +25°C:

    N/A W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    60 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    90 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    113 mΩ

  • VGS (th) Max:

    0.9 V

  • QG Typ @ VGS = 4.5V (nC):

    7.6 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT23

更新时间:2026-8-2 23:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
26+
SOT23
33500
全新进口原装现货,假一罚十
Diodes(美台)
26+
SOT-23
10548
原厂订货渠道,支持账期,一站式服务!
DIODES/美台
22+
SOT-23
30000
原装优质现货订货渠道商
DIODES达尔
25+
-
918000
明嘉莱只做原装正品现货
DIODES
25+
SOT-23
6000
全新原装现货、诚信经营!
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
DIODES/美台
23+
SOT-523
11709
全新原装正品现货可开票
DIODES
16+
TSOT26
3250
进口原装现货/价格优势!
DIODES/美台
21+
SOT-23
30000
十年信誉,只做原装,有挂就有现货!
DIODES/美台
26+
SOT23
18000
原装正品,可配单,支持实单

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