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DMN66D0LDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

DIODES

美台半导体

DMN66D0LDWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Dual N-Channel MOSFET\n•Low Gate Threshold Voltage\n•Fast Switching Speed\n•ESD Protected Gate\n•Halogen and Antimony Free. “Green” Device \n•The DMN66D0LDWQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in I;

DIODES

美台半导体

丝印代码:MN1;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

DIODES

美台半导体

丝印代码:MN1;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Load Switches Features and Benefits • Dual N-Channel MOS

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Package • ESD Protected Gate, 1KV (HBM) • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qu

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:154.17 Kbytes Page:4 Pages

DIODES

美台半导体

DMN66D0LDWQ产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    Yes

  • Polarity:

    N+N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.217 A

  • PD @ TA = +25°C:

    0.47 W

  • RDS(ON) Max @ VGS (10V):

    5000 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    6000 (@5V) mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2 V

  • QG Typ @ VGS = 4.5V (nC):

    0.5 nC

  • QG Typ @ VGS = 10V (nC):

    0.9 nC

  • Packages:

    SOT363

更新时间:2026-5-21 11:27:00
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DIODES/美台
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SC59
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DIODES/美台
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明嘉莱只做原装正品现货
DIODES/美台
23+
CSP
50000
全新原装正品现货,支持订货

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