位置:首页 > IC中文资料 > DMN65D8L

DMN65D8L价格

参考价格:¥0.0720

型号:DMN65D8L-7 品牌:Diodes 备注:这里有DMN65D8L多少钱,2026年最近7天走势,今日出价,今日竞价,DMN65D8L批发/采购报价,DMN65D8L行情走势销售排行榜,DMN65D8L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET has been designed to minimize the onstate\nresistance (RDS(on)) and yet maintain superior switching\nperformance, making it ideal for high efficiency power management\napplications.

DIODES

美台半导体

DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devi

DIODES

美台半导体

丝印代码:MM1;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devi

DIODES

美台半导体

丝印代码:4S;60V N-Channel Mosfet With ESD

Application © Direct logic evel interface: TTLICMOS Drivers: relays, solenoids, lamps, hammers display. memories, transistors, tc. © Eatery operated systems © Soidstate relays

TECHPUBLIC

台舟电子

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation 60V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •Low On-Resistance: RDS(ON)\n•Low Input Capacitance\n•Low Input/Output Leakage\n•Totally Lead-Free & Fully RoHS Compliant \n•For automotive applications requiring specific changecontrol (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certifiedfacilities), pleas;

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

丝印代码:58D;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

丝印代码:58D;N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

Dual N-Channel MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

Dual N-Channel MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

DMN65D8LW_15

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

DMN65D8L产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    DMN65D8LQ

  • Polarity:

    N

  • ESD Diodes:

    Yes

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.3 A

  • PD @ TA = +25°C:

    0.37 W

  • RDS(ON) Max @ VGS (10V):

    3000 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    4000 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    N/A V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    0.87 nC

  • Packages:

    SOT23

更新时间:2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Diodes(美台)
26+
X1-DFN1006-3
10548
原厂订货渠道,支持账期,一站式服务!
DIODES
24+
SOT23-3
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
DIODES
21+
SOT363
12000
全新原装公司现货
36486
SOT363
2257
92
DIODES/美台
19+
NA
47700
DIODES
24+
SOT363
7850
只做原装正品现货或订货假一赔十!
DIODES/美台
25+
SOT-323
918000
明嘉莱只做原装正品现货
DIODES/美台
2019+
SOT23
78550
原厂渠道 可含税出货
DIODES
24+
QFN
92000
郑重承诺只做原装进口现货
DIODES(美台)
24+
N/A
12980
原装正品现货支持实单

DMN65D8L数据表相关新闻