DMN65D8L价格

参考价格:¥0.0720

型号:DMN65D8L-7 品牌:Diodes 备注:这里有DMN65D8L多少钱,2025年最近7天走势,今日出价,今日竞价,DMN65D8L批发/采购报价,DMN65D8L行情走势销售排行榜,DMN65D8L报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devi

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate, 1KV (HBM)  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Devi

DIODES

美台半导体

60V N-Channel Mosfet With ESD

Application © Direct logic evel interface: TTLICMOS Drivers: relays, solenoids, lamps, hammers display. memories, transistors, tc. © Eatery operated systems © Soidstate relays

TECHPUBLIC

台舟电子

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 1kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automo

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:148.85 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:378.72 Kbytes Page:6 Pages

DIODES

美台半导体

Dual N-Channel MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

Dual N-Channel MOSFET

文件:535.59 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

文件:334.35 Kbytes Page:6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:461.1 Kbytes Page:8 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

DMN65D8LW_15

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:154.38 Kbytes Page:5 Pages

DIODES

美台半导体

DMN65D8L产品属性

  • 类型

    描述

  • 型号

    DMN65D8L

  • 功能描述

    MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-18 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
2016+
SOT23
6000
只做原装,假一罚十,公司可开17%增值税发票!
DIODES
24+
SOT23-3
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VB
25+
SOT23
17585
原装正品,假一罚十!
DIODES/美台
25+
SOT-23
38149
DIODES/美台全新特价DMN65D8LQ-7即刻询购立享优惠#长期有货
36486
SOT363
2257
92
DIODES/美台
24+
SOT-23(SOT-23-3)
25000
原装正品公司现货,假一赔十!
DIODES/美台
25+
SOT-323
918000
明嘉莱只做原装正品现货
Diodes(美台)
24+
SOT-363
8168
原厂可订货,技术支持,直接渠道。可签保供合同
DIODES
21+
8080
只做原装,质量保证
DIODES/美台
24+
SOT-363
21000
只做原厂渠道 可追溯货源

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