型号 功能描述 生产厂家 企业 LOGO 操作

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage VGS(th)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” D

DIODES

美台半导体

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual P-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage VG

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:210.85 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:210.01 Kbytes Page:6 Pages

DIODES

美台半导体

更新时间:2025-11-5 8:48:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
22+
SMD
30000
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DIODES
2025+
SOT-563
7695
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23+
SOT-563
12700
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2223+
SOT-563
26800
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DIODES
2016+
SOT-563
6000
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DIODES
19+
SOT-563
200000
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24+
SOT563
7350
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21+
标准封装
215
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24+
NA/
2000
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25+
SOT-563
37979
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