耗尽型MOSFET

N&P Pair Enhancement Mode MOSFET

Description The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

N&P Pair Enhancement Mode MOSFET

Description The ACE12008A is the N&P Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

20V, 8A/10A Fully Integrated Buck Converter with 20μA Quiescent Current and Dual-Phase Capability

Features •High-Power DC/DC Converter in Small Solution Size •Operating VIN range of 3V to 20V •Synchronous DC-DC Converter with IntegratedFETs •8A/10A Maximum Output Current •400kHz and 1.5MHz Fixed Frequency Options •Fixed Soft-Start Time -2.5ms for 400kHz -3.5ms for 1.5MHz •36ns Minimum

20V, 8A/10A Fully Integrated Buck Converter with 20μA Quiescent Current and Dual-Phase Capability

Features •High-Power DC/DC Converter in Small Solution Size •Operating VIN range of 3V to 20V •Synchronous DC-DC Converter with IntegratedFETs •8A/10A Maximum Output Current •400kHz and 1.5MHz Fixed Frequency Options •Fixed Soft-Start Time -2.5ms for 400kHz -3.5ms for 1.5MHz •36ns Minimum

Series 511 Strip-Line Socket w/Bifurcated Contacts & Solder Pin Tails

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