位置：首页 > IC中文资料第10226页 > DMB
DMB晶体管资料
DMB15-12别名：DMB15-12三极管、DMB15-12晶体管、DMB15-12晶体三极管
DMB15-12生产厂家：美国射频增益公司
DMB15-12制作材料：Si-NPN
DMB15-12性质：微波 （MW）_功率放大 （L）
DMB15-12封装形式：贴片封装
DMB15-12极限工作电压：36V
DMB15-12最大电流允许值：6A
DMB15-12最大工作频率：866MHZ
DMB15-12引脚数：6
DMB15-12最大耗散功率：70W
DMB15-12放大倍数：
DMB15-12图片代号：H-48
DMB15-12vtest：36
DMB15-12htest：866000000
- DMB15-12atest：6
DMB15-12wtest：70
DMB15-12代换 DMB15-12用什么型号代替：
DMB价格
参考价格：￥570.0616
型号：DMB01CM24 品牌：Carlo 备注：这里有DMB多少钱，2025年最近7天走势，今日出价，今日竞价，DMB批发/采购报价，DMB行情走势销售排行榜，DMB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Evaluation Board TheMLX90316isamonolithicsensorICfeaturingtheTria⊗is®Halltechnology.ConventionalplanarHalltechnologyisonlysensitivetothefluxdensityappliedorthogonallytotheICsurface. TheTriaisHallsensorisalsosensitivetothefluxdensityappliedparalleltotheICsurface | MelexisMelexis Microelectronic Systems 迈来芯 |  |   | |
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •ComplementaryPair •EpitaxialPlanarDieConstruction •One2222AType(NPN), One2907AType(PNP) •IdealforLowPowerAmplificationandSwitching •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note3) MechanicalData •Case:SOT-26 •CaseMaterial:Molded | DIODESDiodes Incorporated 美台半导体 |  | | |
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •ComplementaryPair •EpitaxialPlanarDieConstruction •One2222AType(NPN), One2907AType(PNP) •IdealforLowPowerAmplificationandSwitching •LeadFreeByDesign/RoHSCompliant(Note2) •GreenDevice(Note3) MechanicalData •Case:SOT-26 •CaseMaterial:Molded | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR Features •N-ChannelMOSFETandNPNTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features •N-ChannelMOSFETandPNPTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features •N-ChannelMOSFETandPNPTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features •N-ChannelMOSFETandPNPTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features •N-ChannelMOSFETandPNPTransistorinOnePackage •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0Vmax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedMOSFETGateupto2kV •Lead,Halogen | DIODESDiodes Incorporated 美台半导体 | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeswitchingandamplifierapplications. | DCCOM Dc Components |  | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeswitchingandamplifierapplications. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeswitchingandamplifierapplications. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierapplications. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforlowfrequencyamplifierapplications. | DCCOM Dc Components | | | |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain | DIODESDiodes Incorporated 美台半导体 | | | |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain •ComplementtoDMBT9022 | DIODESDiodes Incorporated 美台半导体 | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierapplications. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designedforgeneralpurposeamplifierapplications. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description DesignedforapplicationasavideooutputtodrivecolorCRT,orasadialercircuitinelectronicstelephone. | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description DesignedforuseinVHF&UHFoscillatorsandVHFmixerintunerofaTVreceiver. | DCCOM Dc Components | | | |
Evaluation Board 文件：432.86 Kbytes Page：6 Pages | MelexisMelexis Microelectronic Systems 迈来芯 | | | |
Timers Multifunction 文件：138.29 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG |  | | |
Timers Multifunction 文件：132.03 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | | |
Timers Multifunction 文件：138.29 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
功能：可编程（多功能） 包装：散装 描述：RELAY TIME DELAY 100HRS 8A 250V 工业自动化与控制 延时继电器 | ETC 知名厂家 | ETC | | |
Timers Multifunction 文件：132.03 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | | |
Timers Multifunction 文件：138.29 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
功能：可编程（多功能） 包装：散装 描述：RELAY TIME DELAY 100HRS 8A 250V 工业自动化与控制 延时继电器 | ETC 知名厂家 | ETC | | |
Timers Multifunction 文件：138.29 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
IGBT MODULE Dual 200A 1200V 文件：116.66 Kbytes Page：3 Pages | NIEC Nihon Inter Electronics Corporation |  | | |
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：239.07 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：239.07 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DIN RAIL MOUNT BOX 文件：93.69 Kbytes Page：2 Pages | BUD Bud Industries, Inc. |  | | |
Durable UL94V-??0 rated ABS/PC blend plastic housing 文件：85.64 Kbytes Page：2 Pages | BUD Bud Industries, Inc. | | | |
Durable UL94V-??0 rated ABS/PC blend plastic housing 文件：85.64 Kbytes Page：2 Pages | BUD Bud Industries, Inc. | | | |
Durable UL94V-??0 rated ABS/PC blend plastic housing 文件：85.64 Kbytes Page：2 Pages | BUD Bud Industries, Inc. | | | |
Durable UL94V-??0 rated ABS/PC blend plastic housing 文件：85.64 Kbytes Page：2 Pages | BUD Bud Industries, Inc. | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR 文件：144.83 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR 文件：128.1 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR 文件：128.1 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR 文件：128.1 Kbytes Page：7 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
Timers Multifunction 文件：144.98 Kbytes Page：4 Pages | CARLOGAVAZZI Carlo Gavazzi Holding AG | | | |
CONNECTOR HOUSING FEMALE 9 POLES 文件：68.96 Kbytes Page：1 Pages | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 |  | | |
CONNECTOR HOUSING FEMALE 9 POLES 文件：68.65 Kbytes Page：1 Pages | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | | | |
CONNECTOR HOUSING MALE 9 POLES 文件：68.32 Kbytes Page：1 Pages | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR 文件：228.11 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR 文件：228.11 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR 文件：228.5 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR 文件：226.54 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR 文件：228.25 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR 文件：228.21 Kbytes Page：1 Pages | DCCOM Dc Components | | | |
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR 文件：228.41 Kbytes Page：1 Pages | DCCOM Dc Components | | |
DMB产品属性
- 类型
描述
- 型号
DMB
- 制造商
MELEXIS
- 制造商全称
Melexis Microelectronic Systems
- 功能描述
Evaluation Board
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
方舟微 |
23+ |
TO-263 |
25800 |
方舟微替代国产系列出售 |
|||
MIDAS |
新 |
2 |
全新原装 货期两周 |
||||
CTC |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
DEFOND/德丰 |
23+ |
30000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
TW |
2023+ |
8700 |
原装现货 |
||||
CTC |
24+ |
200 |
现货供应 |
||||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Carlo Gavazzi- Inc. |
2022+ |
3 |
全新原装 货期两周 |
DMB芯片相关品牌
DMB规格书下载地址
DMB参数引脚图相关
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DRE3B...G
- DRD3B...G
- DRC3E
- DRC2E
- DRB3B...E
- DRB2B...E
- DRA8B...G
- DRA5B...G
- DRA3B...G
- DRA2TB...TG
- DRA01B...E
- DR42R2/220
- DR42R2/126
- DQS401F
- DQS401C
- DQS401A
- dna芯片
- DMC4002
- DMC4001
- DMC1500
- DMC01R
- DMC01B
- DMC01
- DMBTH10
- DMBTA92
- DMBTA64
- DMBTA56
- DMBTA55
- DMBTA44
- DMBTA43
- DMBTA42
- DMBTA14
- DMBTA13
- DMBTA06
- DMBTA05
- DMB51
- DMB30-12
- DMB20-12
- DMB15-12E
- DMB15-12
- DMB01
- DM-A-PP
- DM-A-JJ
- DMA44
- DMA-25T
- DMA-252
- DMA-242
- DMA24
- DMA2286
- DMA2275
- DMA-120
- DMA12
- DMA-050
- DM9801E
- DM9801A
- DM9801
- DM9701F
- DM96S02
- DM96L02
- DM9638N
- DM9621A
- DM3-7E
- DL50E
- DL50A
- DL100E
- DL100A
- DKS24
- DKS23
- DKS22
- DKS21
- DK60F
- DK60C
- DK56
- DK552
- DK55
- DK53
- DK50A
- DK501
- DK500E
- DK402
- DK401B
DMB数据表相关新闻
DM9000EP以太网控制器芯片
DM9000EP芯片主要用于以太网通信设备和嵌入式系统中，具有以太网接口、低功耗设计、多种接口和协议支持、数据包处理等功能。这使得它适用于各种需要网络通信和数据处理的应用场景，如智能家居、智能电网、工业自动化等。
2023-6-21DM9000EP 以太网开发工具
DM9000EP以太网开发工具ETHERNETCONTROLLERHEADERBRD50x40mm
2023-3-1DM9000E-H 以太网开发工具
DM9000E-H以太网开发工具ETHERNETCONTROLLERHEADERBRD50x40mm
2023-3-1DMC2990UDJ-7
DMC2990UDJ-7MOSFET-阵列N和P沟道20V450mA，310mA350mW表面贴装型SOT-963
2021-10-15DMC3025LSD文资料-数据手册-PDF资料
DMC3025LSD文资料-数据手册-PDF资料
2021-3-18DMC3025LSD文资料-数据手册-PDF资料
DMC3025LSD文资料-数据手册-PDF资料
2021-3-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
