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DM-111A

Magneto-Resistance Element

Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power

SONYSony Corporation

索尼

POWER TRANSISTORS(2.0A,60-100V,50W)

MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA

摩托罗拉

Voltage Comparator

文件:1.08989 Mbytes Page:23 Pages

NSC

国半

Voltage Comparator

文件:1.08989 Mbytes Page:23 Pages

NSC

国半

Operational Amplifier with Bias Network

文件:337.51 Kbytes Page:9 Pages

NSC

国半

更新时间:2026-7-23 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SONY
24+
SIP-3
8

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