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DM-111A

Magneto-Resistance Element

Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. Features • Low power

SONYSony Corporation

索尼

POWER TRANSISTORS(2.0A,60-100V,50W)

MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MOTOROLA

摩托罗拉

Voltage Comparator

文件:1.08989 Mbytes Page:23 Pages

NSC

国半

Voltage Comparator

文件:1.08989 Mbytes Page:23 Pages

NSC

国半

Operational Amplifier with Bias Network

文件:337.51 Kbytes Page:9 Pages

NSC

国半

更新时间:2026-5-14 19:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FOCONN
24+/25+
250
原装正品现货库存价优
FOXCONNELECTRONICS
23+
NA
666
专做原装正品,假一罚百!
MPD
25+
SIP
55000
原厂渠道原装正品假一赔十
UPD
2450+
SIP
6885
只做原装正品假一赔十为客户做到零风险!!
FUJITSU
25+23+
QFP
36108
绝对原装正品全新进口深圳现货
SONY
24+
SIP-3
8
FUJITSU/ABS-S
24+
QFP
43200
郑重承诺只做原装进口现货
FOXCONNELECT
06+
原厂原装
5600
只做全新原装真实现货供应
FUJITSU
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
FOXCONN
24+
SMD
64580
原装现货假一赔十

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