Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Features GaAs Schottky Diode with Enhanced Barrier Height: • lowest operating forward voltage drop due to additional injection of minority carriers • high switching speed - low junction

封装/外壳：ISOPLUS220™ 包装：管件 描述：DIODE ARRAY SCHOTTKY 600V 11A 分立半导体产品 二极管 - 整流器 - 阵列

Gallium Arsenide Schottky Rectifier

Three-Phase Si-Bridge Rectifiers

Three-Phase Si-Bridge Rectifiers Forward Current: 6 A Reverse Voltage: 50 to 1600 V

HiPerDynFREDTM Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (

HiPerFREDTM Epitaxial Diode with soft recovery

Features • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour Applications • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode po

Three-Phase Si-Bridge Rectifiers

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Three-Phase Si-Bridge-Rectifiers

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