Gate Turn-off Thyristor

FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmenta

Gate Turn-off Thyristor

Gate Turn-off Thyristor

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Dual Precision, Low Power BiFET Op Amp

PRODUCT DESCRIPTION The AD648 is a matched pair of low power, precision monolithic operational amplifiers. It offers both low bias current (10 pA max, warmed up) and low quiescent current (400 µA max) and is fabricated with ion-implanted FET and laser wafer trimming technologies. Input bias cur

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 2500 V Mean forward current 2510 A Surge current 30 kA

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS • Designed for Complementary Use with BD645, BD647, BD649 AND BD651 • 62.5 W at 25°C Case Temperture • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A