1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes Page：15 Pages

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes Page：17 Pages