0.35 OHM Low-Voltage Dual SPDT Analog Switch

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0.35-Ω Low-Voltage Dual SPDT Analog Switch

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0.3, Low Voltage Dual SPDT Analog Switches

DESCRIPTION The DG2535E and DG2733E are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed for high performance switching of analog signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2535E and DG273

0.3, Low Voltage Dual SPDT Analog Switches

DESCRIPTION The DG2535E and DG2733E are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed for high performance switching of analog signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2535E and DG273

0.3, Low Voltage Dual SPDT Analog Switches

DESCRIPTION The DG2535E and DG2733E are low voltage, low on-resistance, dual single-pole/double-throw (SPDT) monolithic CMOS analog switches designed for high performance switching of analog signals. Combining low-power, high speed, low on-resistance, and small package size, the DG2535E and DG273

0.35-Ω Low-Voltage Dual SPDT Analog Switch

文件：108.71 Kbytes Page：7 Pages

0.35 OHM Low-Voltage Dual SPDT Analog Switch

文件：72.45 Kbytes Page：5 Pages

0.35-Ω Low-Voltage Dual SPDT Analog Switch

文件：108.71 Kbytes Page：7 Pages

0.35 OHM Low-Voltage Dual SPDT Analog Switch

文件：72.45 Kbytes Page：5 Pages

0.35-Ω Low-Voltage Dual SPDT Analog Switch

文件：108.71 Kbytes Page：7 Pages

0.35 OHM Low-Voltage Dual SPDT Analog Switch

文件：72.45 Kbytes Page：5 Pages

0.3 Ω, Low Voltage Dual SPDT Analog Switches

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse

SWITCHMODE??Power Rectifier

. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes,

MEDIUM CURRENT OVERVOLTAGE TRANSIENT SUPPRESSORS

Overvoltage Transient Suppressors . . . designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standa

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

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