CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de

CMOS SSI

The MC14070B quad exclusive OR gate and the MC14077B quad exclusive NOR gate are constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is de