| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 |   | ||
HiPerFET Power MOSFETs Q-Class 文件：585.34 Kbytes Page：5 Pages | IXYS 艾赛斯 | | ||
HiPerFET Power MOSFETs Q-Class 文件：585.34 Kbytes Page：5 Pages | IXYS 艾赛斯 | |
更新时间：2026-3-11 20:00:01
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
05+ |
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