RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased

RF Power MOSFET

\nVDSS = 500 V\nID25 = 16 A\nRDS(on) = .5 Ω\nPDHS = 375 WN-Channel Enhancement Mode\nAvalanche Rated\nLow Q\ng and Rg\nHigh dv/dt\nNanosecond Switching • Isolated Substrate\n− high isolation voltage (2500V)\n− excellent thermal transfer\n− Increased temperature and power cycling capability\n• IXYS advanced low Qg process\n• Low gate charge and capacitances\n− easier to drive\n− faster switching\n• Low RDS(on)\n• Very low insertion inductance (<2nH);

Switch Mode MOSFETs

·Laser driver, induction heating, switch mode power supplies & switching industrial apps\n·HiperRF MOSFET is ideal for most applications\n·Z-MOS MOSFET reduced capacitance = improved impedance & reduced driver design complexity\n·Two package family options: industry standard (TO-247) & high performa;

RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased

RF Power MOSFET

VDSS = 500 V ID25 = 16 A RDS(on) = .5 Ω PDHS = 375 W N-Channel Enhancement Mode Avalanche Rated Low Q g and Rg High dv/dt Nanosecond Switching Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased