丝印代码：M90N10Q；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM90N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 105A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

N-CHANNEL MOSFET

APPLICATIONS  High power DC/DC converters and switch mode power supplies  DC motor control  Automotive applications  Uninterruptible power supply FEATURES Low gate charge Low Rdson Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

丝印代码：JCS90N10；N-CHANNEL MOSFET

APPLICATIONS  High power DC/DC converters and switch mode power supplies  DC motor control  Automotive applications  Uninterruptible power supply FEATURES Low gate charge Low Rdson Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

丝印代码：HMS90N10DA；N-Channel Super Trench II Power MOSFET

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