SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

1/4.3-inch 1 MP CMOS Digital Image Sensor with Global Shutter

Features  Superior Low−light and IR Performance  1/2−lane 8/10−bit MIPI  Automatic Black Level Calibration (ABLC)  Horizontal and Vertical Mirroring, Windowing and Pixel Binning  5 x 5 Statistics Engine for On−chip Auto Exposure Control for Any Programmable Region of Interest (ROI) 

SMD Schottky Barrier Diode

Io = 100 mA VR = 45 Volts Features Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current (IR=0.1uA typ. @VR=10V). Majority carrier conduction. Mechanical data Case: 1005 (2512) Standard package , molded plastic. Terminals: Gold plat

Neon Indicatiors (Neon, LED and Filament Lamps)

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Inductive Sensors

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