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型号 功能描述 生产厂家 企业 LOGO 操作
DBL157

丝印代码:DBL157;Bridge Rectifiers

Features UL recognition, file #E313149 Glass passivated chip junction High surge current capabilty Solder dip 275 °C max. 7 5, per JESD 22-8106

RFE

RFE international

DBL157

整流桥

YJYCOIN

益嘉源

DBL157

Bridge Rectifiers

文件:159.39 Kbytes Page:4 Pages

YANGJIE

扬杰电子

Single Phase 1.5AMP. Glass Passivated Bridge Rectifiers

文件:132.91 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

文件:59.02 Kbytes Page:2 Pages

TSC

台湾半导体

Single Phase 1.5 AMP. Glass Passivated Bridge Rectifiers

文件:362.9 Kbytes Page:2 Pages

LUGUANG

鲁光电子

Glass Passivated Bridge Rectifiers

文件:180.49 Kbytes Page:4 Pages

TSC

台湾半导体

1.5A, 1000V, Standard Bridge Rectifier

TSC

台湾半导体

封装/外壳:4-DIP(0.300",7.62mm) 包装:散装 描述:BRIDGE RECT 1PHASE 1KV 1.5A DBL 分立半导体产品 二极管 - 桥式整流器

TSC

台湾半导体

1.5A, 400V - 1000V Glass Passivated Bridge Rectifiers

文件:348.86 Kbytes Page:4 Pages

TSC

台湾半导体

1.5A, 1000V, Standard Bridge Rectifier

TSC

台湾半导体

封装/外壳:4-SMD,鸥翼 包装:散装 描述:RECT BRIDGE 1000V 1.5A DBLS 分立半导体产品 二极管 - 桥式整流器

ETC

知名厂家

Bridge Rectifiers

文件:178.71 Kbytes Page:4 Pages

YANGJIE

扬杰电子

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

PANJIT

強茂

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

MOTOROLA

摩托罗拉

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

PHILIPS

飞利浦

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

MOTOROLA

摩托罗拉

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre

NTE

DBL157产品属性

  • 类型

    描述

  • 型号

    DBL157

  • 功能描述

    桥式整流器 1.5 Amp 1000 Volt 50 Amp IFSM

  • RoHS

  • 制造商

    Vishay

  • 产品

    Single Phase Bridge

  • 峰值反向电压

    1000 V 最大 RMS

  • 正向连续电流

    4.5 A

  • 最大浪涌电流

    450 A

  • 正向电压下降

    1 V

  • 最大反向漏泄电流

    10 uA

  • 最大工作温度

    + 150 C

  • 长度

    30.3 mm

  • 宽度

    4.1 mm

  • 高度

    20.3 mm

  • 安装风格

    Through Hole

  • 封装/箱体

    SIP-4

  • 封装

    Tube

更新时间:2026-3-18 18:21:00
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就找我吧!--邀您体验愉快问购元件!

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