Single Phase 1.0AMP. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to

Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Features • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High temperature soldering guaranteed: 260°C / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension • Small size, simple in

封装/外壳：4-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：DIODE BRIDGE 1A 1000V DBL 分立半导体产品 二极管 - 桥式整流器

1A, 1000V, Standard Bridge Rectifier

Glass Passivated Bridge Rectifiers

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封装/外壳：4-DIP（0.300"，7.62mm） 包装：散装 描述：BRIDGE RECT 1PHASE 1KV 1A DBL 分立半导体产品 二极管 - 桥式整流器

1A, 1000V, Standard Bridge Rectifier

1A, 400V - 1000V Glass Passivated Bridge Rectifiers

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TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP