IDC IDC CABLE SOCKET

文件：216.8 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：106.98 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：193.09 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：193.09 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：106.98 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：106.98 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：193.09 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：193.09 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：106.98 Kbytes Page：1 Pages

DIN 41612 IDC DIN 41612

文件：193.09 Kbytes Page：1 Pages

IDC IDC CABLE SOCKET

文件：167.05 Kbytes Page：1 Pages

IDC IDC CABLE SOCKET

文件：167.05 Kbytes Page：1 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)