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DB157GS

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * High surge current capability * Polarity: marked on body * Mounting position: Any * Weight: 1.0 grams * Both normal and Pb free product are available: * Normal:80~95Sn,5~20Pb *

DGNJDZ

南晶电子

DB157GS

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

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DGNJDZ

南晶电子

DB157GS

桥式整流器

BYTESONIC

松浩电子

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

PANJIT

強茂

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

MOTOROLA

摩托罗拉

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

PHILIPS

飞利浦

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

MOTOROLA

摩托罗拉

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre

NTE

DB157GS产品属性

  • 类型

    描述

  • VRRM(V):

    1000

  • VF(mV):

    1100

  • Package:

    DB-1S