Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

Voltage Range 50 to 1000 Volts Current 1.5 Amperes Features • UL Recognized File # E-96005 • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • High temperature sol

1.5A Glass Passivated Bridge Rectifier

Features • Glass passivated chip junction • Low leakage • High surge current capability • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds 0.375” (9.5mm) lead length at 5lbs.(2.3kg) tension • RoHS compliant

Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Features • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs., ( 2.3 kg ) tension • Small size, simple installati

BRIDGE RECTIFIERS

Features • Types up to 1000V VRRM • Ideal for printed circuit board • High surge current capability • High temperature soldering guaranteed: 250°C / 10 seconds • Small size, simple installation

Silicon Bridge Rectifier

Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • Small size, simple installation • Types from 50 V up to 400 V VRRM • Not ESD Sensitive

Single Phase Glass Passivated Silicon Bridge Rectifier

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Bridge Rectifiers

Single Phase Glass Passivated Silicon Bridge Rectifier

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封装/外壳：4-EDIP（0.321"，8.15mm） 包装：散装 描述：BRIDGE RECT 1PHASE 400V 1.5A DB 分立半导体产品 二极管 - 桥式整流器

SINGLE PHASE 1.5 AMP SURFACE MOUNT BRIDGE RECTIFIERS

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DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th