Switching diode Silicon epitaxial planar

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching diode

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching diode Silicon epitaxial planar

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching diode

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching Diode

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Switching Diode

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Switching Diodes

Switching Diode

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Switching Diode

文件：2.24361 Mbytes Page：9 Pages

Switching Diode

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Switching Diodes (支持 AEC-Q101)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY GP 80V 100MA SMD3 分立半导体产品 二极管 - 整流器 - 阵列

Switching Diode

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丝印代码：BU；Ultra high speed switching

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Switching Diode

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Switching Diode

文件：1.01757 Mbytes Page：4 Pages

Switching Diode

文件：2.30101 Mbytes Page：9 Pages

Switching Diodes (支持 AEC-Q101)

Switching Diode

文件：2.30087 Mbytes Page：9 Pages

Switching Diode

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Switching Diode

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封装/外壳：SC-85 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LOW-LEAKAGE, 80V, 100MA, ANODE/C 分立半导体产品 二极管 - 整流器 - 阵列

Ultra high speed switching

文件：358.63 Kbytes Page：4 Pages

Switching Diode

文件：2.19889 Mbytes Page：9 Pages

Switching Diode

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Damper diode

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Silicon Mesa Rectifier

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuit 

Silicon NPN Transistor High Voltage Amp, Video Output

Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) For motor drives ■ Features • Small and lightweight • Low power consumption • Low voltage drive • With 4 elements incorporated