Switching diode Silicon epitaxial planar

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching diode

Features 1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3) 2) Two diode elements are connected in series (VF ×2) per circuit Applications Bias circuits Protection circuits.

Switching Diodes

•超小型塑胶型(UMD3)。\n•高可靠性。;

Switching Diode

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丝印代码：BU；Ultra high speed switching

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Switching Diode

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开关二极管

DA228UM是小型模件型开关二极管。适合一般开关用途。 • High reliability\n• Small mold type;

Automotive Switching Diodes (AEC-Q101 Qualified)

DA228UMFH is a Switching diode with small mold package, suitable for General switching. It is a highly reliable product for automotive. • High reliability\n• Small mold type;

Switching Diode

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Switching Diode

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Switching Diode

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Switching Diode

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Switching Diode

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封装/外壳：SC-85 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：LOW-LEAKAGE, 80V, 100MA, SERIES 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：SC-70，SOT-323 包装：管件 描述：DIODE ARRAY GP 80V 100MA UMD3 分立半导体产品 二极管 - 整流器 - 阵列

Ultra high speed switching

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Damper diode

Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.

Silicon Mesa Rectifier

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage rectification • Efficiency diode in horizontal deflection circuit 

Silicon NPN Transistor High Voltage Amp, Video Output

Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 350V (Min

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (2 elements) Silicon NPN epitaxial planar type (2 elements) For motor drives ■ Features • Small and lightweight • Low power consumption • Low voltage drive • With 4 elements incorporated