High voltage fast-switching PNP power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN93003 is expres

HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST93003 is expr

HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

High voltage fast-switching PNP power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN93003 is expres

HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX93003 is exp