DESCRIPTION

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The ST93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST83003, its complementary NPN transistor.

■ MEDIUM VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING