型号 功能描述 生产厂家&企业 LOGO 操作

Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications

VoltageRegulator,RelayLampDriverElectricalEquipmentApplications

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain:hFE=1000(Min)@IC=1.5A ·Collector-EmitterBreakdownVoltage:V(BR)CEO=120V(Min) ·LowCollector-EmitterSaturationVoltage:VCE(sat)=1.5V(Max)@IC=1.5A ·ComplementtoType2SB765 APPLICATIONS ·Mediumspeedandpowerswitchingappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=27A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=55mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=55mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Technical Product Specification

文件:2.0268 Mbytes Page:94 Pages

IntelIntel Corporation

英特尔

Intel

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

Differential Input Buffer Amplifier

文件:193.28 Kbytes Page:2 Pages

FREQUENCYDEVICES

Frequency Devices, Inc.

FREQUENCYDEVICES

包装:散装 描述:SLIM JAW ADJUSTABLE WRENCH, 4\ 工具 扳手

KLEINKlein Tools, Inc.

凯能

KLEIN

包装:散装 描述:SLIM JAW ADJUSTABLE WRENCH, 8\ 工具 扳手

KLEINKlein Tools, Inc.

凯能

KLEIN

D86产品属性

  • 类型

    描述

  • 型号

    D86

  • 功能描述

    Amplifier. Other

更新时间:2025-8-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOKO
24+
NA/
4037
原装现货,当天可交货,原型号开票
TOKO
25+
TO-92
787
原装正品,假一罚十!
XSEC
1225+
BGA
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
1836+
BGA
9852
只做原装正品现货!或订货假一赔十!
EPCOS/爱普科斯
22+
SMD
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NEC
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
NEC
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
SANYO
TO-92L
8553
一级代理 原装正品假一罚十价格优势长期供货
KEC
24+
TO-92L
5600
24+
BGA
6980
原装现货,可开13%税票

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