丝印代码：D821；DAC82001 16-Bit, Low-Glitch, Single-Channel Voltage-Output, Unbuffered DAC

1 Features • 16-bit performance: 1-LSB DNL and 2-LSB INL • Low glitch energy: 0.5 nV-s • Fast settling: 1 μs • Wide power supply: 2.7 V to 5.5 V • Wide reference range: 2.0 V to VDD • Low power: 250 μA at 5.0 V • 3-wire serial peripheral interface (SPI) up to 50‑MHz • Reset to zero scale

Household and multi-purpose shears

■ Stainless steel blades ■ Comfortable handles loops with soft cushion inserts

Household and multi-purpose shears

■ Stainless steel blades ■ Comfortable handles loops with soft cushion inserts

Household and multi-purpose shears

■ Stainless steel blades ■ Comfortable handles loops with soft cushion inserts

Four-Bit Parallel Bidirectional Bus Driver

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封装/外壳：径向，圆片式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 820PF 100V Y5P RADIAL 电容器 陶瓷电容器

Ceramic Singlelayer DC Disc Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

封装/外壳：径向，圆片式 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 820PF 100V Y5P RADIAL 电容器 陶瓷电容器

Ceramic Singlelayer DC Disc Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

Ceramic Singlelayer DC Disc Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

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