1.2W音频功率放大器

D820是1.2 W音频功放电路。D820在免提电话机中作音频功放，也适用于便携式收录机、盒式录音机、游戏机和其它音响设备。 \n 电路采用DIP8封装形式。 ·工作电源电压低：Vcc=3V\n·静态电流小\n·外围元件少\n·具有较强的纹波抑制能力，无交越失真\n·功耗低\n·工作电源电压范围宽： Vcc=3~16V\n·D820的输出功率和工作电源电压与负载的取值有关：Vcc=12V，RL=8欧时，Po=2W,Vcc=9V，RL=4欧时，Po=1.6W,Vcc=9V，RL=8欧时，Po=1.2W;

丝印代码：D82061；2.4A Current Limit High Side Switch ICs

文件：529.33 Kbytes Page：25 Pages

丝印代码：D82061；2.4A Current Limit High Side Switch ICs

文件：529.33 Kbytes Page：25 Pages

丝印代码：D82061；2.4A Current Limit High Side Switch ICs

文件：529.33 Kbytes Page：25 Pages

丝印代码：D82065；2.4A Current Limit High Side Switch ICs

文件：529.33 Kbytes Page：25 Pages

丝印代码：D82065；2.4A Current Limit High Side Switch ICs

文件：529.33 Kbytes Page：25 Pages

Household and multi-purpose shears

■ Stainless steel blades ■ Comfortable handles loops with soft cushion inserts

Household and multi-purpose shears

■ Stainless steel blades ■ Comfortable handles loops with soft cushion inserts

64K DYNAMIC RAM CONTROLLER

4.6W Dual-Channel Audio Power Amplifier

Key Features • High Output Power POUT=2.5W/CH (Typical) (Vcc=9V, RL=4Ω, f=1kHz, THD=10%) POUT=4.6W/CH (Typical) (Vcc=12V, RL=4Ω, f=1kHz, THD=10%) • Low startup noise; • Low quiescent current; ICCQ=19mA (typical) (Vcc=9V, VIN=0) • Soft clamping • Built-in thermal

4.6W Dual-Channel Audio Power Amplifier

Key Features • High Output Power POUT=2.5W/CH (Typical) (Vcc=9V, RL=4Ω, f=1kHz, THD=10%) POUT=4.6W/CH (Typical) (Vcc=12V, RL=4Ω, f=1kHz, THD=10%) • Low startup noise; • Low quiescent current; ICCQ=19mA (typical) (Vcc=9V, VIN=0) • Soft clamping • Built-in thermal

Ceramic Singlelayer DC Disc Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

High capacitance with small size\nHigh reliability\nCrimp and straight lead styles;

Ceramic Singlelayer DC Disc Capacitors for General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

High capacitance with small size\nHigh reliability\nCrimp and straight lead styles;

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

D Series

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

FEATURES • Low losses • High stability • High capacitance in small size • Kinked (preferred) or straight leads • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Bypassing • Coupling • Resonant circuit

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes Page：9 Pages

Ceramic Singlelayer DC Disc Capacitors For General Purpose Class 1, Class 2 and Class 3, 50 VDC, 100 VDC, 500 VDC

文件：123.29 Kbytes Page：9 Pages

封装/外壳：径向，圆片式 包装：卷带（TR） 描述：CAP CER 82PF 500V U2J RADIAL 电容器 陶瓷电容器

封装/外壳：径向，圆片式 包装：卷带（TR） 描述：CAP CER 82PF 500V U2J RADIAL 电容器 陶瓷电容器

Ceramic Disc Capacitors Class 1 and 2, 50 V (DC) General Purpose

文件：113.12 Kbytes Page：7 Pages

Ceramic Disc Capacitors Class 1 and 2, 50 V (DC) General Purpose

文件：113.12 Kbytes Page：7 Pages

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

文件：323.42 Kbytes Page：7 Pages

Ceramic Disc Capacitors Class 1 and 2, 100 VDC, General Purpose

文件：323.42 Kbytes Page：7 Pages

D Series

文件：295.82 Kbytes Page：6 Pages

Desktop Boards

文件：48.21 Kbytes Page：17 Pages

Netz-Gleichrichterdiode Rectifier Diode

文件：228.31 Kbytes Page：8 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature