8-BIT HMOS MICROPROCESSORS

8 BIT HMOS MICROPROCESSORS The 8085AH is a complete 8-bit parallel Central Processing Unit (CPU) implemented in N-channel, depletion load, silicon gate technology (HMOS). Its instruction set is 100 software compatible with the 8080A microprocessor, and it is designed to improve the present 8080A’

8-BIT HMOS MICROPROCESSOR

8-BIT HMOS MICROPROCESSOR

8-BIT HMOS MICROPROCESSOR

8-BIT HMOS MICROPROCESSOR

线性恒流

8-BIT HMOS MICROPROCESSORS

8-BIT HMOS MICROPROCESSORS

文件：1.67805 Mbytes Page：21 Pages

8-BIT HMOS MICROPROCESSORS

文件：1.67805 Mbytes Page：21 Pages

8-BIT HMOS MICROPROCESSORS

文件：1.67805 Mbytes Page：21 Pages

封装/外壳：径向，罐，3 引线（5.6mm，TO-18） 包装：散装 描述：LASER DIODE 808NM 5MW TO18 光电器件 激光二极管，模块

单片机(MCU/MPU/SOC)

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

Single Element Detector

The LHi 808 pyroelectric infrared-detector series is designed for infrared measurement and gas analysis applications. It includes a pyroelectric element with FET in source follower connection. As TC version it includes thermal compensation by a special compensation element. This detector is encap

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184)