791to821MHzSmall-CellPowerAmplifierModule

Features InGaPHBTtechnology -47dBcACPR@±10MHz,+27dBm 30dBgain Highefficiency Lowtransistorjunctiontemperature Matchedfora50Ωsystem Lowprofileminiaturesurface-mountpackage;RoHScompliant Multi-carriercapability Surface-mount(14-pin,771.3

T-1Sub-MidgetFlangeBase

T-1Sub-MidgetFlangeBase&T-1Bi-PinBase(.050)

791to821MHzSmall-CellPowerAmplifierModule

Features InGaPHBTtechnology -47dBcACPR@±10MHz,+27dBm 30dBgain Highefficiency Lowtransistorjunctiontemperature Matchedfora50Ωsystem Lowprofileminiaturesurface-mountpackage;RoHScompliant Multi-carriercapability Surface-mount(14-pin,771.3

HighEfficiency,1MHz,3A,18VInputSynchronousStepDownRegulator

文件：199.04 Kbytes Page：3 Pages

Sub-MidgetFlangeBase

文件：54.51 Kbytes Page：1 Pages