CMOS 低噪声运算放大器

• 通道数: 1\n\n• 关断功能: N\n\n• 最小 工作电压 V: 2.5\n\n• 最大 工作电压 V: 5.5\n\n• 失调电压 mV: 4.5\n\n• 静态电流 mA: 0.97\n\n• 偏置电流 nA: 1\n\n• 带宽 (-3dB)MHz: 9\n\n• 转换输出率 V/us: 4.8\n\n• 噪声 nV /√Hz: 8\n\n• 封装 形式: SOT23-5 SOP8;

Schnelle Gleichrichterdiode Fast Diode

Fast Diode

Schnelle Gleichrichterdiode Fast Diode

Fast Diode

Fast Rectifier Diodes

\n优势:;

Fire Command Center, Fire Annunciator

文件：448.82 Kbytes Page：1 Pages

Schnelle Gleichrichterdiode Fast Diode

包装：散装 描述：DIODE RECTIFIER 3500V 600A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-200AC，K-PUK 包装：散装 描述：DIODE GEN PURP 4.5KV 1080A 分立半导体产品 二极管 - 整流器 - 单

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件：459.36 Kbytes Page：15 Pages