D5V0F1U2LP价格

参考价格:¥0.4366

型号:D5V0F1U2LP3-7 品牌:Diodes 备注:这里有D5V0F1U2LP多少钱,2025年最近7天走势,今日出价,今日竞价,D5V0F1U2LP批发/采购报价,D5V0F1U2LP行情走势销售排行榜,D5V0F1U2LP报价。
型号 功能描述 生产厂家&企业 LOGO 操作
D5V0F1U2LP

1CHANNELLOWCAPACITANCETVSDIODEARRAY

Features •IEC61000-4-2(ESD):Air±20kV,Contact±15kV •1ChannelofESDProtection •LowChannelInputCapacitanceof0.5pFTypical •LowProfilePackage(0.53mmmax)andUltra-smallPCB FootprintArea(1.08*0.68mmmax)SuitableforCompact PortableElectronics •TypicallyUsed

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEUNIDIRECTIONALTVSDIODE

Features •Ultra-Small,LowProfileLeadlessSurfaceMountPackage(0.6* 0.3*0.3mm) •IEC61000-4-2(ESD):Air–±20kV,Contact–±15kV •1ChannelofESDProtection •LowChannelInputCapacitanceof0.5pFTypical •TypicallyUsedatHighSpeedPortssuchasUSB3.0, IEEE1394,Ser

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

2CHANNELLOWCAPACITANCEBI-DIRECTIONALTVSARRAY

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air–±30kV,Contact–±30kV •2ChannelsofBi-directionalESDProtection •LowChannelInputCapacitance •TypicallyUsedatPortableElectronics,CellularHandsetsand CommunicationSystems •LeadFree/RoHSCompliant(N

DIODES

Diodes Incorporated

DIODES

CHANNELLOWCAPACITANCEBI-DIRECTIONALTVSARRAY

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air–±30kV,Contact–±30kV •2ChannelsofBi-DirectionalESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •Lea

DIODES

Diodes Incorporated

DIODES

4CHANNELLOWCAPACITANCEBI-DIRECTIONALTVSARRAY

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air–±30kV,Contact–±30kV •4ChannelsofBi-directionalESDProtection •LowChannelInputCapacitance •TypicallyUsedatPortableElectronics,CellularHandsetsand CommunicationSystems •LeadFree/RoHSCompliant(N

DIODES

Diodes Incorporated

DIODES

55VBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±25kV •1ChannelofESDProtection •Idealfor60VMOSFETProtection •HighPeakPulseCurrentperIEC61000-4-5Standard •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODES

Diodes Incorporated

DIODES

4CHANNELLOWCAPACITANCEBI-DIRECTIONALTVSARRAY

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air–±30kV,Contact–±30kV •4ChannelsofBi-directionalESDProtection •LowChannelInputCapacitance •TypicallyUsedatPortableElectronics,CellularHandsetsand CommunicationSystems •LeadFree/RoHSCompliant(N

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEUNIDIRECTIONALTVSDIODE

Features •Ultra-Small,LowProfileLeadlessSurfaceMountPackage(0.6* 0.3*0.3mm) •IEC61000-4-2(ESD):Air–±20kV,Contact–±15kV •1ChannelofESDProtection •LowChannelInputCapacitanceof0.5pFTypical •TypicallyUsedatHighSpeedPortssuchasUSB3.0, IEEE1394,Ser

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •Ultra-Small,LowProfileLeadlessSurfaceMountPackage (0.6mmx0.3mmx0.3mm) •ProvidesESDProtectionperIEC61000-4-2Standard: Air–±30kV,Contact–±30kV •OneChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,Portable

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEUNIDIRECTIONALTVSDIODE

Features Ultra-Small,LowProfileLeadlessSurfaceMountPackage(0.6x 0.3x0.3mm) IEC61000-4-2(ESD):Air–±20kV,Contact–±15kV 1ChannelofESDProtection LowChannelInputCapacitanceof0.5pFTypical TypicallyUsedatHighSpeedPortssuchasUSB3.0, IEEE1394,SerialAT

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEUNIDIRECTIONALTVSDIODE

Features Ultra-Small,LowProfileLeadlessSurfaceMountPackage(0.6x 0.3x0.3mm) IEC61000-4-2(ESD):Air–±20kV,Contact–±15kV 1ChannelofESDProtection LowChannelInputCapacitanceof0.5pFTypical TypicallyUsedatHighSpeedPortssuchasUSB3.0, IEEE1394,SerialAT

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

58VUNIDIRECTIONALTVSDIODEARRAY

Features •2.7kWPeakPulsePower(tp=8x20µs) •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •4ChannelsofESDProtectionand4DecouplingCapacitances •TypicallyUsedinPowerOverEthernetPSEEquipmentagainst LineOvervoltages •TotallyLead-Fr

DIODES

Diodes Incorporated

DIODES

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features •ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV •1ChannelofESDProtection •LowChannelInputCapacitance •TypicallyUsedinCellularHandsets,PortableElectronics, CommunicationSystems,ComputersandPeripherals •LeadFree/RoHSComplian

DIODES

Diodes Incorporated

DIODES

1CHANNELLOWCAPACITANCETVSDIODEARRAY

Features •IEC61000-4-2(ESD):Air±20kV,Contact±15kV •1ChannelofESDProtection •LowChannelInputCapacitanceof0.5pFTypical •LowProfilePackage(0.53mmmax)andUltra-smallPCB FootprintArea(1.08*0.68mmmax)SuitableforCompact PortableElectronics •TypicallyUsed

DIODES

Diodes Incorporated

DIODES

1CHANNELLOWCAPACITANCETVSDIODEARRAY

Features IEC61000-4-2(ESD):Air±20kV,Contact±15kV 1ChannelofESDProtection LowChannelInputCapacitanceof0.5pFTypical LowProfilePackage(0.53mmMax)andUltra-SmallPCB FootprintArea(1.08mm*0.68mmMax)SuitableforCompact PortableElectronics TypicallyUsedatH

DIODES

Diodes Incorporated

DIODES

1CHANNELLOWCAPACITANCETVSDIODEARRAY

Features IEC61000-4-2(ESD):Air±20kV,Contact±15kV 1ChannelofESDProtection LowChannelInputCapacitanceof0.5pFTypical LowProfilePackage(0.53mmMax)andUltra-SmallPCB FootprintArea(1.08mm*0.68mmMax)SuitableforCompact PortableElectronics TypicallyUsedatH

DIODES

Diodes Incorporated

DIODES

封装/外壳:0402(1006 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TVS DIODE 5.5VWM 12VC DFN1006-2 电路保护 TVS - 二极管

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM

封装/外壳:0402(1006 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TVS DIODE 5.5VWM 12VC DFN1006-2 电路保护 TVS - 二极管

PAMDiodes Incorporated

龙鼎微龙鼎微电子(上海)有限公司

PAM
更新时间:2025-5-23 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
21+
X1-DFN1006-2
8080
只做原装,质量保证
DIODES/美台
23+
DFN1006-2
12500
全新原装现货,假一赔十
DIODES/美台
20+
DFN1006-2
2800
绝对全新原装现货,欢迎来电查询
DIODES/美台
22+
DFN1006-2
200000
现货,原厂原装假一罚十!
DIODES/美台
25+
DFN1006-2
220000
原装正品,假一罚十!
DIODES/美台
24+
NA
30000
房间原装现货特价热卖,有单详谈
DIODES
1609+
DFN1006-2
240000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES
23+
被动器件
5864
原装原标原盒 给价就出 全网最低
DIODES(美台)
24+
DFN10062(SOD882)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
DIODES/美台
24+
NA/
10000
优势代理渠道,原装正品,可全系列订货开增值税票

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