CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY

2SD5017 -> Correct Partnumber : 3DD5017 3DD5017 is high breakdown voltage of NPNbipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.

NPN (COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

* NPN Triple Diffused Planar Silicon Transistor * High Collector-Base Voltage Vcbo = 1500V

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED

文件：83.3 Kbytes Page：5 Pages

Gold metallised multi-purpose silicon DMOS RF FET

IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal

文件：312.59 Kbytes Page：2 Pages

IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal

文件：202.43 Kbytes Page：3 Pages

IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal

文件：203.29 Kbytes Page：3 Pages

SMT TEST POINTS

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Delay Line With Fully Integrated Fiber Optics

文件：1.53301 Mbytes Page：5 Pages