丝印代码：D480；N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD480 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

丝印代码：D480；30V N-Channel MOSFET

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丝印代码：D4804；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：284.41 Kbytes Page：7 Pages

丝印代码：D4804；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：284.41 Kbytes Page：7 Pages

丝印代码：D4804；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：284.41 Kbytes Page：7 Pages

290mW 8Ω 立体声耳机音频功率放大器

D4800 是一块AB类立体声耳机音频功率放大器电路。D4800在5V电源时输出功率最高可达290mW(8Ω 负载，失真度10%)。适合在便携式数字音响设备中作功率放大用。\n D4800采用DIP8、SOP8的封装形式封装。 ·电源电压：单电源： 2V to 7V, 双电源： ±1.0V to ±3.5V\n·高信噪比： 100dB DIP8 \n·转速快： 5V/μs \n·失真低 -65dB\n·总谐波失真+噪声为10% 的输出功率: 8欧 290mW, 16欧 190mW\n·输出电压振幅大\n·电源抑制比好\n·低功耗\n·短路断电\n·工作温度范围宽\n·无开关噪声;

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 8A 80-530V 继电器 固态继电器

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 8A 80-530V 继电器 固态继电器

固态继电器(可控硅输出)

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification