COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C

PNP Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

COMPLEMENTARY SILICON POWER TRANSISTORS

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30 - 80 VOLTS 50 WATTS D44H,D44H1,D44H10,D44H11,D44H2,D44H4,D44H5,D44H7,D44H8 --> NPN D45H,D45H1,D45H10,D45H11,D45H2,D45H4,D45H5,D45H7,D45H8 --> PNP

POWER TRANSISTORS(10A,30-80V,50W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and power amplifiers applications

Silicon PNP Power Transistors

DESCRIPTION ··With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and power amplifiers applications

PNP SILICON POWER TRANSISTORS

DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11. ■ STMicroelectronics PREFERRED SALEST

功率双极晶体管，PNP，80 V，10 A

These series of plastic,NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 V (Max) @ 8.0 A\n• Fast Switching Speeds\n• Complementary Pairs Simplifies Designs\n• Pb-Free Packages are Available;

Complementary power transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT PNP 60V 8A 3-Pin(3+Tab) TO-220AB Rail

PNP SILICON POWER TRANSISTORS

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Silicon PNP Power Transistors

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Silicon PNP Power Transistors

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10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS

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Complementary Silicon Power Transistors

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Complementary Silicon Power Transistors

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PNP SILICON POWER TRANSISTORS

文件：152.08 Kbytes Page：5 Pages

Complementary Silicon Power Transistors

文件：68.07 Kbytes Page：5 Pages

Complementary Silicon Power Transistors

文件：87.33 Kbytes Page：5 Pages

Complementary Silicon Power Transistors

文件：102.9 Kbytes Page：5 Pages

PNP Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C