PNP Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 8A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C

PNP SILICON POWER TRANSISTORS

DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11. ■ STMicroelectronics PREFERRED SALEST

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PNP Power Amplifier

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

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