POWER TRANSISTORS(10A,30-80V,50W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C

NPN SILICON POWER TRANSISTORS

Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ S

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Fast switching speeds • Low collector saturation voltage APPLICATIONS • For general purpose power amplification and switching regulators,converters and power amplifiers applications

COMPLEMENTARY SILICON POWER TRANSISTORS

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30 - 80 VOLTS 50 WATTS D44H,D44H1,D44H10,D44H11,D44H2,D44H4,D44H5,D44H7,D44H8 --> NPN D45H,D45H1,D45H10,D45H11,D45H2,D45H4,D45H5,D45H7,D45H8 --> PNP

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-emitter saturation voltage, fast switching speed. Features General purpose switching, general purpose amplifier.

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A • Fast Switching Speeds • Complement to Type D45H11 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose power amplification and s

High Power Bipolar Transistor

Description: Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and switching regulators; low and high frequency inverters/converters and many others. Features: • Ve

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管

双极晶体管

互补功率晶体管

Silicon NPN Power Transistors

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NPN Epitaxial Silicon Transistor

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Complementary power transistors

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Complementary Silicon Power Transistors

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NPN SILICON POWER TRANSISTORS

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Complementary Silicon Power Transistors

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10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS

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Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package

Complementary power transistors

Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fas

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

Complementary Silicon Power Transistors

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Complementary Silicon Power Transistors

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Complementary Silicon Power Transistors

文件：87.33 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：247.44 Kbytes Page：4 Pages

COMPLEMENTARY SILICON

DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications.

SILICON PLASTIC POWER TRANSISTORS

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SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

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SILICON PLANAR POWER TRANSISTORS

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SILICON PLANAR POWER TRANSISTORS

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