POWER TRANSISTORS(10A,30-80V,50W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C

NPN SILICON POWER TRANSISTORS

Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ Power amplifier ■ S

COMPLEMENTARY SILICON POWER TRANSISTORS

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30 - 80 VOLTS 50 WATTS D44H,D44H1,D44H10,D44H11,D44H2,D44H4,D44H5,D44H7,D44H8 --> NPN D45H,D45H1,D45H10,D45H11,D45H2,D45H4,D45H5,D45H7,D45H8 --> PNP

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Fast switching speeds • Low collector saturation voltage APPLICATIONS • For general purpose power amplification and switching regulators,converters and power amplifiers applications

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low collector-emitter saturation voltage, fast switching speed. Features General purpose switching, general purpose amplifier.

High Power Bipolar Transistor

Description: Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and switching regulators; low and high frequency inverters/converters and many others. Features: • Ve

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A • Fast Switching Speeds • Complement to Type D45H11 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose power amplification and s

互补功率晶体管

The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications • Low collector-emitter saturation voltage \n• Fast switching speed;

Silicon NPN Power Transistors

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NPN Epitaxial Silicon Transistor

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封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管

双极晶体管

NPN SILICON POWER TRANSISTORS

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Complementary Silicon Power Transistors

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10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS

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Complementary power transistors

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Complementary Silicon Power Transistors

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丝印代码：D44H11FP；Complementary power transistors

Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fas

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package

Low Vcesat NPN Epitaxial Planar Transistor

Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics

Complementary Silicon Power Transistors

文件：68.07 Kbytes Page：5 Pages

Complementary Silicon Power Transistors

文件：87.33 Kbytes Page：5 Pages

Complementary Silicon Power Transistors

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NPN Epitaxial Silicon Transistor

文件：247.44 Kbytes Page：4 Pages

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra