Full blocking capability 50/60Hz over a wide temperature range

Key Parameters enndaten    VRRM 6800 V    IFAVM 2800 A (TC=100 °C)    IFSM 3570A (T 57000 A C=55°C)    VT0 0,84 V    rT 0,215 mΩ    RthJC 8,5 K/kW    Clamping Force 36 … 52 kN    Max. Diameter 121 mm    Contact Diameter 86 mm    Height 35 mm Features • Full blocking capability 50/60Hz

Rectifier Diode

Rectifier Diode

Rectifier Diode

封装/外壳：DO-200AE 包装：散装 描述：DIODE GEN PURP 6KV 3910A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-200AE 包装：散装 描述：DIODE GEN PURP 6.5KV 3910A 分立半导体产品 二极管 - 整流器 - 单

二极管盘

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

RF Manual 16th edition

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

KNOB

文件：80.14 Kbytes Page：1 Pages