丝印代码：D263；LP3470A Ultra Low Power Voltage Supervisor With Programmable Delay and 1% Reset Threshold

1 Features 1• Pin-to-pin compatible with LP3470 • 5-Pin SOT-23 package • Open-drain RESET output • Programmable reset time-out period using an external capacitor • Immune to short VCC transients • ±1% Reset threshold accuracy (typical) • Ultra-low quiescent current (0.3 μA typical) •

丝印代码：D263；LP3470A Ultra Low Power Voltage Supervisor With Programmable Delay and 1% Reset Threshold

1 Features 1• Pin-to-pin compatible with LP3470 • 5-Pin SOT-23 package • Open-drain RESET output • Programmable reset time-out period using an external capacitor • Immune to short VCC transients • ±1% Reset threshold accuracy (typical) • Ultra-low quiescent current (0.3 μA typical) •

丝印代码：D263；LP3470A Ultra Low Power Voltage Supervisor With Programmable Delay and 1 Reset Threshold

文件：1.17583 Mbytes Page：23 Pages

丝印代码：D2636；Power Amplifier Applications High-Power Switching Applications

文件：245.44 Kbytes Page：5 Pages

3A低压差稳压器电路

封装形式:\n功能描述:3A低压差稳压器电路\n主要参数:;

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

丝印代码：CD2635T3A；TRIACS

APPLICATIONS AC switching Phase control FEATURES  Glass-passivated mesa chip for reliability and uniform  RoHS products  Uniform gate trigger currents in three quadrants

High voltage ratings up to 2500V

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SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

文件：50.6 Kbytes Page：2 Pages