High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

Customer Specifications

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.0063 2) Braid Data a) Nominal ID 3/8 b) AWG of Ends 34 c) Number of Carriers 24 d) Nominal Percent Coverage 90 e) Total Number of Ends 192 f) Approx. Equiv. AWG 11 g) Ap

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