丝印代码：D2060；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 20V,ID = 2.8A RDS(ON)

四运算放大器

Silicon NPN Power Transistors

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高压分离器件 二极管

• 电流范围广\n• 高浪涌承载\n• 外型为DO-200AC（K-PUK），NPS的盘式D壳\n• 符合RoHS规范;

高压分离器件 二极管

• 电流范围广\n• 电压高达4500V\n• 高浪涌承载\n• 集电极扩散法\n• 外型为DO-200AC（K-PUK），NPS的盘式D壳\n• 无铅\n• 符合RoHS规范;

High voltage ratings up to 2500 V

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High voltage ratings up to 4500V

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Standard Recovery Diodes

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Standard Recovery Diodes

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Standard Recovery Diodes

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Standard Recovery Diodes

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Standard Recovery Diodes

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Standard Recovery Diodes

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Standard Recovery Diodes

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SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

QUAD OPERATIONAL AMPLIFIER?

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QUAD OPERATIONAL AMPLIFIER?

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