Dual N-Channel Enhancement MOSFET

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 2.5V drive. • Mount height 1.1mm. • Composite type, facilitating high-density mounting. • Drain common specifications.

METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz

包装：散装 描述：IRONWORKER'S REBAR PLIERS, LEFT 工具 钳子

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

RESISTOR MODULES

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Mini Solderless Breadboard - 2x4 Points

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Thick Panel Snap Bushings

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Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)

文件：79.69 Kbytes Page：7 Pages

Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)

文件：79.69 Kbytes Page：7 Pages