NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

NPN power transistor, 120V, 7A / Triple Diffused Planar NPN

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