NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES - HIGH RELIABILITY FOR LOW COST - WIDE FREQUENCY RANGE - EXCELLENT ATTENUATION BEHAVIOUR

HIGH RELIABILITY FOR LOW COST

NPN power transistor, 120V, 7A / Triple Diffused Planar NPN

PNP EPITAXIAL PLANAR TRANSISTOR

Description The HTL195 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

16-Bit, 85ksps ADC with 10uA Shutdown

General Description The MAX195 is a 16-bit successive-approximation analog-to-digital converter (ADC) that combines high speed, high accuracy, low power consumption, and a 10µA shutdown mode. Internal calibration circuitry corrects linearity and offset errors to maintain the full rated performanc

16-Bit, 85ksps ADC with 10uA Shutdown

General Description The MAX195 is a 16-bit successive-approximation analog-to-digital converter (ADC) that combines high speed, high accuracy, low power consumption, and a 10µA shutdown mode. Internal calibration circuitry corrects linearity and offset errors to maintain the full rated performanc

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Ultra Reliable Power Transistors

文件：421.49 Kbytes Page：13 Pages