High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c

NPN Silicon Epitaxial Transistor

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中等功率双极型晶体管

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 100V 3A TO251 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Integrated Circuit Module, AF PO, 20W, Dual Power Supply

Features: • Small–Sized Package Allows Audio Sets to be made Slimmer • Facilitates Thermal Design of Slim Stereo Sets • Constant–Current Circuit Minimizes Pop Noise During Power ON/OFF • Possible to Design Electronic Supplementary Circuits: Pop Noise Muting During Power ON/OFF

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

Adaptive Variable Reluctance Sensor Amplifier

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Adaptive Variable Reluctance Sensor Amplifier

文件：133.86 Kbytes Page：6 Pages

Microwave Bipolar Power Amplifier

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