Low voltage fast-switching NPN power transistor

Description The device is manufactured in NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation volatage ■ High current gain chara

Low voltage fast-switching NPN power transistor

SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

5t h Generation thinQ!TM 650V SiC Schottky Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new fa

6-pin JST SM Plug Receptacle Cable Set

o JST SM plug + receptacle connector: JST SM connector datasheet o Length: 162mm / 6.4 o Weight (female / male): 5.1g / 5.6g

HIGH PERFORMANCE DIMMABLE LED CONTROLLER

Features  Primary Side Regulation without Optocoupler  Valley Switching for Low Switching Loss  Tight CS Reference Voltage 0.4V±1.5  High PF>0.9 and Low THD

Stock and Custom* Colors for Dome Plugs and Shorty Plugs

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SPACERS , STANDOFFS

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Constant voltage (CV) operation

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