Silicon NPN Power Transistors

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丝印代码：D1415B；Bipolar Transistors Silicon NPN Triple-Diffused Type

Applications • High-Power Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= 3 V, IC= 3 A) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 3 A)

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

Silicon NPN Power Transistors

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High-Power Switching Applications

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Premier Supplier of Electronic Hardware

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ASA GREY POWDER PAINTED 0.036 20 GAUGE STEEL BODY

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Accelerator Series FPGAs ??ACT 3 Family

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Accelerator Series FPGAs ??ACT 3 Family

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Single 14-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Mspswith input buffer; CMOS or LVDS DDR digital outputs

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