丝印代码：D12S60；Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor    material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on    the switching behavior • No forward recovery • Pb-free lead plating; RoHS com

Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor    material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on    the switching behavior • No forward recovery • Pb-free lead plating; RoHS com

12.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

2ndGeneration thinQ!TM SiC Schottky Diode

文件：250.06 Kbytes Page：7 Pages

2nd Generation thinQ SiC Schottky Diode

文件：423.93 Kbytes Page：7 Pages

2nd Generation thinQ SiC Schottky Diode

文件：236.94 Kbytes Page：7 Pages