Kingston DDR3/3L DRAM for embedded applications

KEY FEATURES • Double Data Rate (DDR) architecture: two data transfers per clock cycle • High-speed data transfer is realized by 8 bits prefetch pipelined architecture • Bi-directional differential data strobe (DOS and /DQS) is transmitted/received with data for capturing data at the receiver

Kingston i-Temp DDR3/3L DRAM for embedded applications

KEY FEATURES • Double Data Rate architecture: two data transfers per clock cycle • High-speed data transfer is realized by 8 bits prefetch pipelined architecture • Bi-directional differential data strobe (DOS and /DQS) is transmitted/received with data for capturing data at the receiver • DOS

Kingston DDR3/3L DRAM for embedded applications

KEY FEATURES • Double Data Rate (DDR) architecture: two data transfers per clock cycle • High-speed data transfer is realized by 8 bits prefetch pipelined architecture • Bi-directional differential data strobe (DOS and /DQS) is transmitted/received with data for capturing data at the receiver

Kingston DDR3/3L DRAM for embedded applications

KEY FEATURES • Double Data Rate (DDR) architecture: two data transfers per clock cycle • High-speed data transfer is realized by 8 bits prefetch pipelined architecture • Bi-directional differential data strobe (DOS and /DQS) is transmitted/received with data for capturing data at the receiver

面向设备制造商的嵌入式 DRAM 组件

面向设备制造商的嵌入式 DRAM 组件

DRAM 组件

TV-AUDIO PROCESSOR IC

TV-AUDIO PROCESSOR IC

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

N-Channel Enhancement-Mode Vertical DMOS Power FETs????

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P-Channel Enhancement-Mode Vertical DMOS Power FETs???

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half