Large-Current Switching Applications

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METAL GATE RF SILICON FET

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OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Very low C(rss)\n• Simple bias circuits\n• Low noise\n• High gain - 10 dB minimum;

1KV Isolated 1W unregulated single dual separated output DIP8 DC?껪C Converter

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Raychem S200 Shield Terminators

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METAL GATE RF SILICON FET

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM,

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

FOR LCD TVS, PIF AND SIF SYSTEM

FOR LCD TVS, PIF AND SIF SYSTEM FEATURES ● PIF circuit • High input sensitivity • 3-stage variable-gain PIF amplifier • Output with black noise inverter (TA8805F) • Output without black noise inverter (TA1207F) • High-speed response peak AGC with dual time constant

130 MHz/85 MHz RGB Video Amplifier System with Blanking

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130 MHz/85 MHz RGB Video Amplifier System with Blanking

文件：435.35 Kbytes Page：24 Pages