METAL GATE RF SILICON FET

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

•Simplified amplifier design\n• Suitable for broad band applications\n• Low C(rss)\n• Low noise\n• High gain - 10 dB minimum;

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

60-Bit VFD Tube Driver with Digital Dimming and PWM Conversion Function

GENERAL DESCRIPTION The MSC1201-xx is a 1/2 duty vacuum fluorescent display tube driver implemented in Bi-CMOS technology. This LSI consists of 64-bit shift registers, 64 latches, PWM conversion circuit, a digital dimming circuit, 30-segment driver and 2-grid driver. As the MSC1201-xx has both a

60-Bit VFD Tube Driver with Digital Dimming and PWM Conversion Function

GENERAL DESCRIPTION The MSC1201-xx is a 1/2 duty vacuum fluorescent display tube driver implemented in Bi-CMOS technology. This LSI consists of 64-bit shift registers, 64 latches, PWM conversion circuit, a digital dimming circuit, 30-segment driver and 2-grid driver. As the MSC1201-xx has both a

Video Amplifier System

文件：374.57 Kbytes Page：16 Pages

Video Amplifier System

文件：374.57 Kbytes Page：16 Pages